The Thermo Scientific Hyperion II System enables fast, accurate transistor probing for electrical characterization and fault localization, supporting the semiconductor technology development, yield engineering and device reliability improvement. The unparalleled stability of the Hyperion II System enables nanoprobing down to the 5 nm technology node and beyond. Moreover, it features a technique to promptly identify shorts, opens, leakage paths and resistive contacts with more than 1000 times the sensitivity of passive voltage contrast. The scanning capacitance microscopy (SCM) module provides image-based fault localization for silicon on insulator (SOI) wafers, along with high-resolution dopant profiling.
