The Thermo Scientific™ Hyperion II™ System enables fast, accurate transistor probing for electrical characterization and fault localization, supporting the semiconductor technology development, yield engineering and device reliability improvement. The unparalleled stability of the Thermo Scientific™ Hyperion II™ System enables nanoprobing down to the 5 nm technology node and beyond. Moreover, it features a technique to promptly identify shorts, opens, leakage paths and resistive contacts with more than 1000 times the sensitivity of passive voltage contrast. The scanning capacitance microscopy (SCM) module provides image-based fault localization for silicon on insulator (SOI) wafers, along with high-resolution dopant profiling.
